Sensors manufactured using the company's technology feature record-high electro-optical performance, compared to other CMOS imagers currently available on the market. Independent testing measured dark current below 200 electrons per second. This value represents an extremely high signal-to-noise (S/N) ratio of over 80dB, enabling imagers with very high sensitivity and photo-grade image quality.
Tower Semiconductor Ltd., POB 619, Migdal Haemek, Israel 23105. Tel: 972-6-6506611; Fax: 972-6-6547788.